IRL3705ZSTRLPBF
MOSFET N-CH 55V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-channel Power MOSFET, part number IRL3705ZSTRLPBF. This 55V device features a low on-resistance of 8mOhm maximum at 52A and 10Vgs, enabling efficient power handling. With a continuous drain current rating of 75A at 25°C and a maximum power dissipation of 130W, it is suitable for demanding applications. Key electrical parameters include a gate charge of 60nC at 5V and input capacitance of 2880pF at 25V. The device operates across a temperature range of -55°C to 175°C and is supplied in the TO-263-3, D2PAK surface mount package, delivered on tape and reel. Applications include automotive, industrial power control, and high-current switching circuits.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 52A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 25 V |
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