IRL3705ZL
MOSFET N-CH 55V 75A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3705ZL. This device features a 55 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 75 A at 25°C (Tc). The low on-resistance is specified as 8 mOhm maximum at 52 A and 10 V (Vgs). Designed for through-hole mounting in a TO-262 package, this MOSFET offers a maximum power dissipation of 130 W (Tc). Key parameters include a gate charge (Qg) of 60 nC maximum at 5 V (Vgs) and an input capacitance (Ciss) of 2880 pF maximum at 25 V (Vds). The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in industrial and automotive sectors requiring high-current switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 52A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 25 V |
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