IRL3705NSTRR
MOSFET N-CH 55V 89A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3705NSTRR, offers a 55 V drain-source breakdown voltage and a continuous drain current of 89 A at 25°C (Tc). This device features a low on-resistance of 10 mOhm maximum at 46 A and 10 V, with a gate threshold voltage of 2 V at 250 µA. Gate charge (Qg) is specified at 98 nC maximum at 5 V, and input capacitance (Ciss) is 3600 pF maximum at 25 V. The MOSFET is packaged in a D2PAK (TO-263-3) surface-mount format, supplied on tape and reel. Maximum power dissipation is 3.8 W (Ta) and 170 W (Tc). Operating temperature range is from -55°C to 175°C. This component is suitable for high-current switching applications, including power supplies and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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