IRL3705NS
MOSFET N-CH 55V 89A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL3705NS is an N-Channel Power MOSFET designed for high-current switching applications. This device features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) rating of 89A at 25°C (Tc). The low on-resistance (Rds(on)) of a maximum 10mOhm at 46A and 10V ensures efficient power delivery with minimal conduction losses.
With a gate charge (Qg) of 98nC at 5V and input capacitance (Ciss) of 3600pF at 25V, this MOSFET offers favorable switching characteristics. It is housed in a TO-263-3, D2PAK package for surface mounting, providing excellent thermal performance with a maximum power dissipation of 170W (Tc). The operating junction temperature range is -55°C to 175°C. This component is suitable for applications in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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