IRL3705NLPBF
MOSFET N-CH 55V 89A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3705NLPBF. This device features a 55V drain-source voltage and a continuous drain current of 89A at 25°C (Tc). The low on-resistance is specified at 10mOhm maximum at 46A and 10V gate-source voltage. Maximum gate charge (Qg) is 98 nC at 5V, with input capacitance (Ciss) at 3600 pF maximum at 25V. The MOSFET is housed in a through-hole TO-262-3 Long Leads (I2PAK) package, offering excellent thermal performance with 170W power dissipation at 25°C (Tc). Designed for demanding applications, this component is suitable for power supply, motor control, and industrial automation systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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