IRL3502STRLPBF
MOSFET N-CH 20V 110A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRL3502STRLPBF, is engineered for demanding applications. This device features a 20V drain-source voltage rating and a continuous drain current capability of 110A at 25°C (Tc). With a low on-resistance of 7mOhm maximum at 64A and 7V, it minimizes conduction losses. The IRL3502STRLPBF offers a maximum power dissipation of 140W (Tc) and a gate charge of 110 nC at 4.5V. It utilizes a D2PAK surface mount package (TO-263-3, D2PAK) for efficient thermal management. Key parameters include an input capacitance (Ciss) of 4700 pF at 15V and a threshold voltage (Vgs(th)) of 700mV at 250µA. This component is suitable for use in power supply, automotive, and industrial motor control applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 64A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 15 V |