IRL3502SPBF
MOSFET N-CH 20V 110A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL3502SPBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 110A at 25°C (Tc), with a maximum power dissipation of 140W (Tc). The low on-resistance (Rds On) of 7mOhm at 64A and 7V, achieved with a 4.5V gate drive, minimizes conduction losses. Key parameters include a maximum gate charge (Qg) of 110 nC at 4.5V and an input capacitance (Ciss) of 4700 pF at 15V. The IRL3502SPBF is housed in a TO-263-3, D2PAK package for efficient surface mounting and operates across a wide temperature range of -55°C to 150°C (TJ). This component is utilized in industries such as automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 64A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 15 V |
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