IRL3502PBF
MOSFET N-CH 20V 110A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3502PBF, offers a 20V drain-source voltage and a continuous drain current of 110A at 25°C. This through-hole component, housed in a TO-220AB package, features a low on-resistance of 7mOhm at 64A and 7V Vgs. Gate charge (Qg) is specified at 110 nC maximum at 4.5V, and input capacitance (Ciss) is 4700 pF maximum at 15V. With a maximum power dissipation of 140W, this MOSFET operates across a temperature range of -55°C to 150°C. It is commonly utilized in automotive and industrial applications requiring high current switching capabilities.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 64A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 15 V |
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