IRL3502
MOSFET N-CH 20V 110A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL3502 is an N-Channel Power MOSFET with a drain-source voltage (Vdss) of 20V. This component offers a continuous drain current (Id) of 110A at 25°C and a maximum power dissipation of 140W (Tc). Featuring a low on-resistance (Rds On) of 7mOhm at 64A and 7V, this MOSFET is designed for efficient power switching. The gate charge (Qg) is 110 nC maximum at 4.5V Vgs, with input capacitance (Ciss) at 4700 pF maximum. The IRL3502 operates with a gate-source voltage range of ±10V and a threshold voltage (Vgs(th)) of 700mV minimum at 250µA. Packaged in a TO-220AB through-hole configuration, this device is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 64A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 15 V |
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