IRL3402S
MOSFET N-CH 20V 85A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL3402S is an N-Channel Power MOSFET designed for high-current switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 85A at 25°C (Tc). The low on-resistance of 8mOhm is achieved at 51A and 7V Vgs, with a typical gate drive voltage range of 4.5V to 7V. With a maximum power dissipation of 110W (Tc) and a junction temperature range of -55°C to 150°C, it is suitable for demanding environments. Key characteristics include a gate charge of 78 nC (max) at 4.5V and input capacitance (Ciss) of 3300 pF (max) at 15V. The device is supplied in a TO-263-3, D2PAK package for surface mounting, facilitating efficient thermal management. This MOSFET finds application in automotive systems, industrial power supplies, and motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 51A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 15 V |
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