IRL3303S
MOSFET N-CH 30V 38A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series IRL3303S is an N-channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 38A at 25°C (Tc). The low Rds(on) of 26mOhm at 20A and 10V gate drive ensures minimal conduction losses. With a maximum power dissipation of 68W (Tc), it is suitable for demanding thermal environments. The IRL3303S is packaged in a TO-263-3, D2PAK surface mount configuration, facilitating automated assembly. Key parameters include a gate charge (Qg) of 26 nC at 4.5V and input capacitance (Ciss) of 870 pF at 25V. It operates across a wide temperature range of -55°C to 175°C (TJ). This device finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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