IRL3215
MOSFET N-CH 150V 12A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRL3215, offers a 150V drain-source voltage and a continuous drain current of 12A at 25°C. This through-hole component features a low on-resistance of 166mOhm at 7.2A and 10V Vgs. With a maximum power dissipation of 80W at 25°C (Tc), it is suitable for demanding applications. Key parameters include a gate charge of 35nC at 5V, input capacitance of 775pF at 25V, and a threshold voltage of 2V at 250µA. Designed for robust performance, the IRL3215 is commonly utilized in power switching, motor control, and industrial power supply applications. It is supplied in a TO-220AB package.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 166mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 775 pF @ 25 V |
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