IRL3202S
MOSFET N-CH 20V 48A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL3202S is an N-Channel Power MOSFET designed for demanding applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 48A at 25°C (Tc), with a maximum power dissipation of 69W (Tc). The low on-resistance of 16mOhm is achieved at 29A and 7V (Vgs), facilitated by a gate drive range of 4.5V to 7V. Key parameters include a gate charge (Qg) of 43 nC at 4.5V and an input capacitance (Ciss) of 2000 pF at 15V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ) and is presented in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package. This component is suitable for use in automotive, industrial power control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 29A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 15 V |
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