IRL3103SPBF
MOSFET N-CH 30V 64A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3103SPBF, offers a 30V drain-source breakdown voltage and a continuous drain current of 64A (Tc) at 25°C. This device features a low on-resistance of 12mOhm (max) at 34A and 10V Vgs, with a gate charge of 33 nC (max) at 4.5V Vgs. The input capacitance (Ciss) is a maximum of 1650 pF at 25V. Designed for surface mounting in the TO-263-3, D2PAK package, the IRL3103SPBF provides a maximum power dissipation of 94W (Tc) and operates across a temperature range of -55°C to 175°C. It is suitable for applications in automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
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