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IRL3103D2S

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IRL3103D2S

MOSFET N-CH 30V 54A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies IRL3103D2S is a 30V N-Channel Power MOSFET from the FETKY™ series. This surface mount device, packaged in a D2PAK (TO-263-3) configuration, offers a continuous drain current of 54A at 25°C (Tc). Featuring a low on-resistance of 14mOhm at 32A and 10V Vgs, it is optimized for applications requiring efficient power switching. The gate threshold voltage is specified at 4.5V (max) with a maximum gate-source voltage of ±16V. Input capacitance (Ciss) is 2300 pF (max) at 25V, and gate charge (Qg) is 44 nC (max) at 4.5V. This component is commonly utilized in automotive, industrial, and power supply applications where high current handling and low conduction losses are critical.

Additional Information

Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 32A, 10V
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id-
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 25 V

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