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IRL3103D2PBF

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IRL3103D2PBF

MOSFET N-CH 30V 54A TO220AB

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies IRL3103D2PBF is an N-Channel Power MOSFET from the FETKY™ series. This through-hole component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 54A at 25°C (Tc). The low on-resistance is specified at 14mOhm maximum at 32A and 10V Vgs. Key parameters include a gate charge (Qg) of 44 nC at 4.5V and input capacitance (Ciss) of 2300 pF at 25V. Power dissipation is rated at 2W (Ta) and 70W (Tc). This device is commonly utilized in power supply, automotive, and industrial control applications. The component is packaged in a TO-220AB.

Additional Information

Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 32A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 25 V

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