IRL3103D2
MOSFET N-CH 30V 54A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRL3103D2 is an N-Channel MOSFET from the FETKY™ series. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 54A at 25°C (Tc). With a maximum on-resistance of 14mOhm at 32A and 10V, it is designed for efficient power switching applications. The device is housed in a TO-220AB package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 44 nC at 4.5V and input capacitance (Ciss) of 2300 pF at 25V. Maximum power dissipation is rated at 2W (Ta) and 70W (Tc). This MOSFET is suitable for automotive and industrial power management systems.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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