IRL3103D1S
MOSFET N-CH 30V 64A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRL3103D1S is an N-Channel Power MOSFET from the FETKY™ series. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 64 A at 25°C (Tc). The IRL3103D1S offers a low on-resistance (Rds On) of 14 mOhm maximum at 34 A and 10 V of gate-source voltage. With a gate charge (Qg) of 43 nC maximum at 4.5 V, it supports efficient switching. The MOSFET is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, facilitating integration into compact designs. Maximum power dissipation is rated at 89 W (Tc) and 3.1 W (Ta). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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