IRL3103D1PBF
MOSFET N-CH 30V 64A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRL3103D1PBF, a N-Channel Power MOSFET from the FETKY™ series. This component features a 30V drain-source breakdown voltage and a continuous drain current of 64A at 25°C (Tc). The device offers a low on-resistance of 14mOhm maximum at 34A and 10V Vgs. With a gate charge of 43 nC at 4.5V and input capacitance of 1900 pF at 25V, it is designed for efficient switching applications. The IRL3103D1PBF is packaged in a TO-220AB through-hole configuration, supporting a maximum power dissipation of 89W (Tc). This MOSFET is suitable for use in automotive, industrial power control, and high-current switching applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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