IRL3102S
MOSFET N-CH 20V 61A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL3102S. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 61A at 25°C (Tc). The low on-resistance (Rds On) is specified at 13mOhm maximum at 37A and 7V gate drive. Designed for surface mounting in a D2PAK (TO-263-3) package, it offers a power dissipation of 89W (Tc). The gate charge (Qg) is 58 nC maximum at 4.5V, with a threshold voltage (Vgs(th)) of 700mV minimum at 250µA. Operating temperature range is -55°C to 150°C (TJ). This component is utilized in applications within the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 37A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 15 V |
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