IRL3102
MOSFET N-CH 20V 61A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® Series N-Channel Power MOSFET, part number IRL3102. This through-hole component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 61A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 13mOhm at 37A and 7V gate-source voltage. Gate charge (Qg) is specified at 58 nC maximum at 4.5V, with input capacitance (Ciss) at 2500 pF maximum at 15V. The IRL3102 supports gate drive voltages from 4.5V to 7V and has a maximum gate-source voltage rating of ±10V. Power dissipation is rated at 89W (Tc). Operating temperature range is -55°C to 150°C (TJ). The component is packaged in a TO-220AB. This MOSFET is commonly utilized in automotive and industrial applications requiring high current switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 37A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 15 V |
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