IRL2910STRRPBF
MOSFET N-CH 100V 55A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL2910STRRPBF, offers a 100V drain-source voltage and a continuous drain current capability of 55A at 25°C (Tc). This surface mount device, packaged in a TO-263-3 D2PAK, features a low on-resistance of 26mOhm maximum at 29A and 10V. Key electrical characteristics include a gate charge of 140 nC maximum at 5V and an input capacitance (Ciss) of 3700 pF maximum at 25V. The threshold voltage (Vgs(th)) is a maximum of 2V at 250µA. This component is widely utilized in industrial and automotive applications, including power supplies, motor control, and power switching circuits. It is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 29A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
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