IRL2910SPBF
MOSFET N-CH 100V 55A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL2910SPBF, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 55A at 25°C (Tc). This device features a low on-resistance of 26mOhm maximum at 29A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 2V maximum at 250µA. The device exhibits a typical input capacitance (Ciss) of 3700pF and a gate charge (Qg) of 140 nC. Designed for surface mounting in the TO-263-3, D2PAK package, it supports a wide operating temperature range from -55°C to 175°C. The maximum power dissipation is 200W at 25°C (Tc). This component is suitable for applications in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
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