IRL2910PBF
MOSFET N-CH 100V 55A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL2910PBF. This through-hole component features a 100V drain-source breakdown voltage and a continuous drain current capability of 55A at 25°C, with a maximum power dissipation of 200W (Tc). The Rds (On) is specified at 26mOhm maximum at 29A and 10V gate drive. Key parameters include a gate charge (Qg) of 140 nC (max) at 5V and input capacitance (Ciss) of 3700 pF (max) at 25V. Designed for a wide operating temperature range of -55°C to 175°C (TJ), this TO-220AB packaged device is commonly utilized in industrial and automotive applications requiring robust power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
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