IRL2505STRR
MOSFET N-CH 55V 104A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRL2505STRR is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 104A at 25°C. The low on-resistance (Rds On) of 8mOhm at 54A and 10V gate-source voltage, coupled with a gate charge of 130 nC at 5V, ensures minimal conduction and switching losses. With a maximum power dissipation of 200W at 25°C case temperature, it is suitable for demanding thermal environments. The device operates across a temperature range of -55°C to 175°C (TJ) and is supplied in a TO-263-3, D2PAK surface-mount package, presented on tape and reel. This MOSFET is commonly utilized in industrial automation, power supplies, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 54A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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