IRL2505STRLPBF
MOSFET N-CH 55V 104A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL2505STRLPBF, offers a 55V drain-source voltage and a continuous drain current of 104A at 25°C (Tc). This surface mount device features a low on-resistance of 8mOhm at 54A and 10V Vgs, with a maximum gate charge of 130 nC at 5V. The MOSFET utilizes advanced trench technology for superior performance and ruggedness. Its D2PAK (TO-263-3, D2PAK) package provides excellent thermal dissipation, supporting up to 200W (Tc) power dissipation. Operating across a temperature range of -55°C to 175°C, this component is suitable for high-power switching applications in automotive, industrial automation, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 54A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
