IRL2505SPBF
MOSFET N-CH 55V 104A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel power MOSFET, part number IRL2505SPBF, is a robust solution for demanding applications. This device features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 104A at 25°C (Tc). Key performance parameters include a low on-resistance (Rds On) of 8mOhm at 54A and 10V, and a gate charge (Qg) of 130 nC at 5V. The IRL2505SPBF offers significant power handling capabilities with a maximum power dissipation of 200W (Tc). Designed for surface mounting in a D2PAK (TO-263-3) package, it operates within an extended temperature range of -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive systems, industrial power supplies, and motor control applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 54A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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