IRL2505S
MOSFET N-CH 55V 104A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRL2505S. This device features a 55 V drain-source voltage and a continuous drain current of 104 A at 25°C (Tc). The low on-resistance of 8 mOhm is achieved at 54 A and 10 V Vgs. Key electrical characteristics include a gate charge of 130 nC at 5 V and input capacitance of 5000 pF at 25 V. Designed for surface mount applications, it is housed in a TO-263-3, D2PAK package. Maximum power dissipation is rated at 200 W (Tc) and 3.8 W (Ta). Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in industrial and automotive sectors requiring high current switching capabilities.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 54A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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