IRL2505PBF
MOSFET N-CH 55V 104A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® Power MOSFET IRL2505PBF is an N-Channel device featuring a 55V drain-source voltage and a continuous drain current of 104A at 25°C (Tc). This through-hole component, housed in a TO-220AB package, offers a low on-resistance of 8mOhm maximum at 54A and 10V. With a gate charge of 130 nC at 5V and input capacitance of 5000 pF at 25V, it is suitable for applications requiring efficient switching. Maximum power dissipation is rated at 200W (Tc) with an operating temperature range of -55°C to 175°C. This device is commonly utilized in automotive, industrial motor control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 54A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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