IRL2505L
MOSFET N-CH 55V 104A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL2505L is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) capability of 104A at 25°C (Tc). With a low on-resistance (Rds On) of 8mOhm at 54A and 10V, it minimizes conduction losses. The device exhibits a gate charge (Qg) of 130 nC at 5V and input capacitance (Ciss) of 5000 pF at 25V. Operating from a nominal gate drive of 4V to 10V, the IRL2505L offers a maximum gate-source voltage (Vgs) of ±16V. Power dissipation is rated at 3.8W (Ta) and 200W (Tc). The TO-262-3 Long Leads package, also known as I2PAK or TO-262AA, facilitates through-hole mounting. This MOSFET is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 54A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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