IRL2203NSTRRPBF
MOSFET N-CH 30V 116A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRL2203NSTRRPBF is an N-Channel HEXFET® Power MOSFET designed for high-current switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 116 A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 7 mOhm at 60 A and 10 V. With a Gate Charge (Qg) of 60 nC at 4.5 V, it offers efficient switching characteristics. The IRL2203NSTRRPBF is housed in a TO-263-3 D2PAK surface mount package, suitable for demanding thermal management with a power dissipation of 180 W (Tc). Typical applications include power supply units, motor control, and automotive systems. It operates across a junction temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 180W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
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