IRL2203NSTRLPBF
MOSFET N-CH 30V 116A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL2203NSTRLPBF is a 30V N-Channel power MOSFET designed for high-current switching applications. This component features a low on-resistance of 7mOhm at 60A and 10V Vgs, coupled with a continuous drain current capability of 116A at 25°C (Tc). The D2PAK (TO-263-3) package, supplied on tape and reel, facilitates surface mounting. Key electrical parameters include input capacitance (Ciss) of 3290 pF (max) at 25V and gate charge (Qg) of 60 nC at 4.5V. With a maximum junction temperature of 175°C and a power dissipation of 180W at 25°C (Tc), it is suitable for demanding power management solutions in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 180W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
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