IRL2203NLPBF
MOSFET N-CH 30V 116A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL2203NLPBF is an N-Channel Power MOSFET designed for high-current switching applications. This device features a low on-resistance of 7 mOhm at 60A and 10V Vgs, with a continuous drain current capability of 116A at 25°C (Tc). The 30V drain-source voltage rating and ±16V gate-source voltage limit make it suitable for demanding power management tasks. Key parameters include a gate charge of 60 nC at 4.5V Vgs and an input capacitance of 3290 pF at 25V Vds. With a maximum power dissipation of 180W at 25°C (Tc), this TO-262 package component is engineered for robust performance in industrial and automotive power systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 180W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
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