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IRL1404ZSTRL

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IRL1404ZSTRL

MOSFET N-CH 40V 75A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRL1404ZSTRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current capability of 75A at 25°C (Tc). The low on-resistance of 3.1mOhm at 75A and 10V (Vgs) minimizes conduction losses. With a maximum power dissipation of 230W (Tc), it is suitable for demanding power conversion tasks. The device operates over a wide temperature range of -55°C to 175°C (TJ) and is housed in a TO-263-3, D2PAK surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 110 nC at 5V and an input capacitance (Ciss) of 5080 pF at 25V. This MOSFET is commonly utilized in industrial automation, automotive systems, and power supply designs.

Additional Information

Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs3.1mOhm @ 75A, 10V
FET Feature-
Power Dissipation (Max)230W (Tc)
Vgs(th) (Max) @ Id2.7V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds5080 pF @ 25 V

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