IRL1404ZLPBF
MOSFET N-CH 40V 120A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET N-Channel, part number IRL1404ZLPBF, offers a 40V drain-source breakdown voltage and a robust 120A continuous drain current capability at 25°C case temperature. This through-hole TO-262 packaged device features a low on-resistance of 3.1mOhm maximum at 75A and 10V Vgs. With a maximum power dissipation of 230W at 25°C case temperature, it is suitable for demanding power applications. Key parameters include a gate charge of 110 nC at 5V Vgs and input capacitance of 5080 pF at 25V Vds. Operating temperature ranges from -55°C to 175°C. This component is widely utilized in automotive, industrial automation, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5080 pF @ 25 V |