IRL1404STRLPBF
MOSFET N-CH 40V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL1404STRLPBF is an N-Channel power MOSFET designed for demanding applications. This device features a 40V drain-source breakdown voltage and a continuous drain current rating of 160A at 25°C (Tc). With a low on-resistance of 4mOhm maximum at 95A and 10V, the IRL1404STRLPBF minimizes conduction losses. The 3.8W power dissipation at ambient temperature and 200W at case temperature, coupled with a -55°C to 175°C operating temperature range, ensures robust performance. Key electrical characteristics include a 140nC maximum gate charge and 6600pF input capacitance. Packaged in a TO-263-3, D2PAK surface mount configuration and supplied on tape and reel, this MOSFET is suitable for high-power switching applications across various industries including automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.3V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V |
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