IRL1404PBF
MOSFET N-CH 40V 160A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRL1404PBF, offers a 40V drain-source voltage with a continuous drain current of 160A at 25°C. This through-hole TO-220AB packaged device features a low on-resistance of 4mOhm at 95A and 10V Vgs. With a maximum power dissipation of 200W, it is suitable for high-power switching applications. Key parameters include a gate charge of 140 nC at 5V and input capacitance of 6590 pF at 25V. This component is utilized in industries such as automotive and industrial power control. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.3V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6590 pF @ 25 V |
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