IRL1104SPBF
MOSFET N-CH 40V 104A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL1104SPBF is an N-Channel Power MOSFET designed for high-performance applications. This device features a drain-source breakdown voltage (Vds) of 40V and a continuous drain current (Id) of 104A at 25°C. The extremely low on-resistance (Rds On) of 8mOhm at 62A and 10V gate drive simplifies circuit design and improves efficiency. With a maximum gate charge (Qg) of 68 nC at 4.5V, it offers excellent switching characteristics. The IRL1104SPBF supports a wide operating temperature range from -55°C to 175°C. Its D2PAK (TO-263-3) surface-mount package provides robust thermal management, with a maximum power dissipation of 167W (Tc). This component is widely utilized in automotive, industrial power control, and high-current switching applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 167W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3445 pF @ 25 V |
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