IRL1104S
MOSFET N-CH 40V 104A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL1104S is a 40V N-Channel Power MOSFET in a D2PAK package. This device features a low Rds(on) of 8mOhm at 62A and 10V Vgs, with a continuous drain current capability of 104A at 25°C. The IRL1104S exhibits a gate charge of 68 nC at 4.5V Vgs and an input capacitance of 3445 pF at 25V Vds. It is designed for surface mounting with a maximum power dissipation of 167W at 25°C case temperature. Operating temperature ranges from -55°C to 175°C. This component is suitable for applications in automotive and industrial sectors requiring high current switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 167W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3445 pF @ 25 V |
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