IRL1104PBF
MOSFET N-CH 40V 104A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRL1104PBF. This through-hole component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 104A at 25°C. The IRL1104PBF exhibits a maximum on-resistance (Rds On) of 8mOhm at 62A and 10V, with a gate-source threshold voltage (Vgs(th)) of 1V at 250µA. Key parameters include a gate charge (Qg) of 68 nC at 4.5V and input capacitance (Ciss) of 3445 pF at 25V. The device offers a maximum power dissipation of 167W (Tc) and operates within a temperature range of -55°C to 175°C. The TO-220AB package is suitable for applications in industrial and automotive sectors requiring robust power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3445 pF @ 25 V |
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