IRL1104LPBF
MOSFET N-CH 40V 104A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRL1104LPBF, an N-Channel HEXFET® power MOSFET. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 104A at 25°C (Tc). With a low on-resistance of 8mOhm at 62A and 10V Vgs, it offers efficient power switching. The device is packaged in a TO-262-3 Long Leads (I2PAK) configuration, suitable for through-hole mounting. Key electrical parameters include a gate charge of 68 nC at 4.5V Vgs and an input capacitance of 3445 pF at 25V Vds. Maximum power dissipation is rated at 2.4W (Ta) and 167W (Tc). The IRL1104LPBF is utilized in applications such as automotive power management, industrial motor control, and power supply units. It operates across a wide temperature range from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 167W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3445 pF @ 25 V |
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