IRL1104L
MOSFET N-CH 40V 104A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' IRL1104L is an N-Channel HEXFET® power MOSFET designed for high-current applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 104A at 25°C (Tc). The low on-resistance (Rds On) of 8mOhm at 62A and 10V gate-source voltage (Vgs) ensures efficient power delivery. With a low gate charge (Qg) of 68 nC at 4.5V, it offers fast switching characteristics. The device's thermal performance is supported by a maximum power dissipation of 167W (Tc) and 2.4W (Ta). The IRL1104L is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. Typical industries utilizing this component include industrial automation and power supply applications. It operates across an extended temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 167W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3445 pF @ 25 V |
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