IRL1004STRRPBF
MOSFET N-CH 40V 130A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL1004STRRPBF is an N-Channel Power MOSFET designed for high-current applications. This device features a 40V drain-to-source voltage rating and a continuous drain current capability of 130A at 25°C (Tc). The low on-resistance of 6.5mOhm at 78A and 10V gate drive voltage ensures efficient power transfer. With a maximum gate charge of 100 nC at 4.5V, it offers fast switching performance. The MOSFET exhibits a maximum input capacitance (Ciss) of 5330 pF at 25V.
The IRL1004STRRPBF is packaged in a D2PAK (TO-263-3) surface mount configuration, suitable for demanding thermal management with a continuous drain current of 130A (Tc) and power dissipation of 200W (Tc). The operating temperature range is -55°C to 175°C (TJ). This component finds application in automotive, industrial power control, and high-power switching systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 78A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5330 pF @ 25 V |
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