IRL1004PBF
MOSFET N-CH 40V 130A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRL1004PBF is an N-Channel HEXFET® power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 130 A at 25°C, with a maximum power dissipation of 200 W (Tc). The low on-resistance of 6.5 mOhm at 78 A and 10 V gate-source voltage, coupled with a gate charge (Qg) of 100 nC at 4.5 V, optimizes performance in demanding power conversion circuits.
The TO-220AB package with through-hole mounting facilitates integration into various power supply designs, motor control systems, and industrial automation equipment. Operating across a wide temperature range from -55°C to 175°C (TJ), the IRL1004PBF ensures reliability in harsh environments. Its input capacitance (Ciss) is 5330 pF at 25 V, and the threshold voltage (Vgs(th)) is 1 V at 250 µA.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 78A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5330 pF @ 25 V |
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