IRL1004L
MOSFET N-CH 40V 130A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL1004L is a 40V N-Channel Power MOSFET designed for high current applications. This component features a low on-resistance of 6.5mOhm at 78A and 10V Vgs, enabling efficient power transfer. With a continuous drain current capability of 130A (Tc) and a maximum power dissipation of 200W (Tc), it is suitable for demanding thermal conditions. The device utilizes MOSFET technology and is housed in a TO-262 package. Key parameters include a gate charge (Qg) of 100 nC at 4.5V and input capacitance (Ciss) of 5330 pF at 25V. It operates across a temperature range of -55°C to 175°C. This component finds application in power supply, automotive, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 78A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5330 pF @ 25 V |
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