IRL1004
MOSFET N-CH 40V 130A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRL1004 MOSFET, N-Channel, 40V Drain-Source Voltage. This component features a continuous drain current of 130A (Tc) and a maximum power dissipation of 200W (Tc). The Rds On is specified at 6.5mOhm at 78A and 10V Vgs. Gate charge (Qg) is 100 nC at 4.5V Vgs, with input capacitance (Ciss) at 5330 pF @ 25V Vds. The device operates from a 4.5V to 10V drive voltage and has a maximum gate-source voltage of ±16V. The threshold voltage (Vgs(th)) is 1V at 250µA. Packaged in a TO-220AB through-hole configuration, the IRL1004 is suitable for applications demanding robust power switching. It finds utility in automotive, industrial power control, and consumer electronics sectors. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 78A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5330 pF @ 25 V |
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