IRFZ48ZSPBF
MOSFET N-CH 55V 61A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ48ZSPBF is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vds) of 55V and a continuous drain current (Id) capability of 61A at 25°C (Tc). The Rds(On) is specified at a maximum of 11mOhm at 37A and 10V, with a typical gate charge (Qg) of 64 nC at 10V. Input capacitance (Ciss) is a maximum of 1720 pF at 25V. The MOSFET is housed in a D2PAK (TO-263-3) surface-mount package, offering a maximum power dissipation of 91W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in demanding industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 91W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 25 V |
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