IRFZ48Z
MOSFET N-CH 55V 61A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFZ48Z, is a robust component designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous drain current (Id) of 61 A at 25°C, with a maximum power dissipation of 91 W at the same temperature. The low on-resistance (Rds On) of 11 mOhm is achieved at 37 A and a gate-source voltage of 10 V. Key electrical parameters include a gate charge (Qg) of 64 nC and input capacitance (Ciss) of 1720 pF, both specified at standard test conditions. The device operates reliably across a wide temperature range from -55°C to 175°C. Packaged in a standard TO-220AB through-hole configuration, the IRFZ48Z is suitable for use in power supply, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 91W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 25 V |
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