IRFZ48VSTRLPBF
MOSFET N-CH 60V 72A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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This Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFZ48VSTRLPBF, offers a 60V drain-source voltage and a continuous drain current of 72A at 25°C (Tc). Designed for demanding applications, it features a low on-resistance of 12mOhm maximum at 43A and 10V gate-source voltage, with a maximum power dissipation of 150W (Tc). The device utilizes advanced MOSFET technology for efficient power switching. Key parameters include a gate charge of 110 nC at 10V and an input capacitance of 1985 pF at 25V. The IRFZ48VSTRLPBF is supplied in a D2PAK (TO-263-3) surface mount package, delivered on tape and reel. It operates across a wide temperature range of -55°C to 175°C (TJ). This component is commonly found in industrial automation, power supply units, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1985 pF @ 25 V |