IRFZ48VS
MOSFET N-CH 60V 72A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ48VS is an N-Channel power MOSFET designed for high-performance switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 72A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance (Rds On) of 12mOhm is achieved at 43A and 10V gate drive. Key electrical characteristics include an input capacitance (Ciss) of 1985pF (Max) at 25V and a gate charge (Qg) of 110 nC at 10V. The IRFZ48VS is housed in a TO-263-3, D2PAK package, suitable for surface mounting, and operates across a temperature range of -55°C to 175°C (TJ). This device is commonly utilized in power supply units, industrial motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1985 pF @ 25 V |
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